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 74AHC1G125
SINGLE BUFFER GATE WITH 3-STATE OUTPUT
Description
The 74AHC1G125 is a single non-inverting buffer/bus driver with a 3-state output. The output enters a high impedance state when a HIGH-level is applied to the output enable (OE) pin. The device is designed for operation with a power
Pin Assignments
(Top View) OE 1 A2 GND 3 4Y SOT25 / SOT353 5 Vcc
supply range of 2.0V to 5.5V.
NEW PRODUCT
Features
* * * * * Supply Voltage Range from 2.0V to 5.5V 8 mA Output Drive at 5.0V CMOS low power consumption Schmitt Trigger Action at All Inputs Make the Circuit Tolerant for Slower Input Rise and Fall Time. ESD Protection per JESD 22 o o o * * * Exceeds 200-V Machine Model (A115-A) Exceeds 2000-V Human Body Model (A114-A) Exceeds 1000-V Charged Device Model (C101C)
Applications
* * General Purpose Logic Wide array of products such as: o o o o o PCs, networking, notebooks, netbooks, PDAs Computer peripherals, hard drives, CD/DVD ROM TV, DVD, DVR, set top box Phones, Personal Navigation / GPS MP3 players ,Cameras, Video Recorders
Latch-Up Exceeds 100mA per JESD 78, Class II SOT25 and SOT353: Assembled with "Green" Molding Compound (no Br, Sb) Lead Free Finish / RoHS Compliant (Note 1)
1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at http://www.diodes.com/products/lead_free.html.
Notes:
74AHC1G125
Document number: DS35176 Rev. 1 - 2
1 of 9 www.diodes.com
March 2011
(c) Diodes Incorporated
74AHC1G125
SINGLE BUFFER GATE WITH 3-STATE OUTPUT Pin Descriptions
Pin Name Pin No. 1 2 3 4 5 Description Output Enable Data Input Ground Data Output Supply Voltage
OE
A GND Y Vcc
NEW PRODUCT
Logic Diagram
1
OE
A
2
4
Y
Function Table
Inputs Output A H L X Y H L Z
OE
L L H
74AHC1G125
Document number: DS35176 Rev. 1 - 2
2 of 9 www.diodes.com
March 2011
(c) Diodes Incorporated
74AHC1G125
SINGLE BUFFER GATE WITH 3-STATE OUTPUT Absolute Maximum Ratings (Note 2)
Symbol ESD HBM ESD CDM ESD MM VCC VI VO IIK IOK IO ICC IGND TJ TSTG
Notes:
Description Human Body Model ESD Protection Charged Device Model ESD Protection Machine Model ESD Protection Supply Voltage Range Input Voltage Range Voltage applied to output in high or low state Input Clamp Current VI<0 Output Clamp Current (VO < 0 or VO > VCC) Continuous output current (VO = 0 to VCC) Continuous current through VCC Continuous current through GND Operating Junction Temperature Storage Temperature
Rating 2 1 200 -0.5 to 6.5 -0.5 to 6.5 -0.5 to VCC +0.5 -20 20 25 50 -50 -40 to 150 -65 to 150
Unit KV KV V V V V mA mA mA mA mA C C
NEW PRODUCT
2. Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device operation should be within recommend values.
Recommended Operating Conditions (Note 3)
Symbol VCC VIH Operating Voltage VCC = 2V High-level Input Voltage VCC = 3V VCC = 5.5V VCC = 2V VIL VI VO IOH Low-level input voltage Input Voltage Output Voltage VCC = 2V High-level output current VCC = 3.3V 0.3V VCC = 5V 0.5V VCC = 2V IOL Low-level output current Input transition rise or fall rate Operating free-air temperature VCC = 5V 0.5V VCC = 3V t/V TA
Notes:
Parameter
Min 2 1.5 2.1 3.85
Max 5.5
Unit V V
0.5 0.9 1.65 0 0 5.5 VCC -50 -4 -8 50 4 8 100 20 -40 125 V V uA mA uA mA ns/V C V
VCC = 3V VCC = 5.5V
VCC = 3.3V 0.3V VCC = 5V 0.5V
3. Unused inputs should be held at VCC or Ground.
74AHC1G125
Document number: DS35176 Rev. 1 - 2
3 of 9 www.diodes.com
March 2011
(c) Diodes Incorporated
74AHC1G125
SINGLE BUFFER GATE WITH 3-STATE OUTPUT Electrical Characteristics
Symbol Parameter Test Conditions VCC 2V 3V 4.5V 3V 4.5V 2V 3V 4.5V 3V 4.5V 0 to 5.5V 5.5V 25C Typ. 2 3 4.5 -40C to 85C Min Max 1.9 2.9 4.4 2.48 3.8 0.1 0.1 0.1 0.36 0.36 0.1 0.25 0.1 0.1 0.1 0.44 0.44 1 2.5 -40C to 125C Min Max 1.9 2.9 4.4 2.40 3.70 0.1 0.1 0.1 0.55 0.55 2 10 A A A pF Unit
IOH = -50A VOH High Level Output Voltage I = -4mA OH IOH = -8mA
Min 1.9 2.9 4.4 2.58 3.94
Max
V
NEW PRODUCT
VOL
Low Level Output Voltage
IOL = 50A IOL = 4mA IOL = 8mA VI = 5.5V or GND VO =0 to 5.5V VI = 5.5V or GND IO=0 VI = VCC - or GND SOT25
V
II IOZ ICC Ci JA
Input Current Z State Leakage Current Supply Current Input Capacitance Thermal Resistance Junction-toAmbient Thermal Resistance Junction-toCase
5.5V 5.5V 2.0 195 (Note 4) 430 58 (Note 4)
1 10
10 10
40 10
o
C/W
SOT353 SOT25 SOT353
JC
Note:
o
C/W
155
4. Test conditions for SOT25, and SOT353: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
74AHC1G125
Document number: DS35176 Rev. 1 - 2
4 of 9 www.diodes.com
March 2011
(c) Diodes Incorporated
74AHC1G125
SINGLE BUFFER GATE WITH 3-STATE OUTPUT Switching Characteristics
VCC = 3.3V 0.3 (see Figure 1)
Parameter tpd ten From (Input) A TO (OUTPUT) Y Y Y CL=15pF CL=50pF CL=15pF CL=50pF CL=15pF CL=50pF Min 0.6 0.6 0.6 0.6 0.6 0.6 25C Typ. 4.7 6.6 5.0 6.9 6.0 8.3 Max 8.0 11.5 8.0 11.5 9.7 13.2 -40C to 85C Min Max 0.6 0.6 0.6 0.6 0.6 0.6 9.5 13.0 9.5 13.0 11.5 15.0 -40C to 125C Min Max 0.6 0.6 0.6 0.6 0.6 0.6 11.5 14.5 10.5 14.5 12.5 16.5 Unit ns ns ns ns ns ns
OE
OE
NEW PRODUCT
tdis
VCC = 5V 0.5V (see Figure 1)
Parameter tpd ten tdis From (Input) A TO (OUTPUT) Y Y Y CL=15pF CL=50pF CL=15pF CL=50pF CL=15pF CL=50pF Min 0.6 0.6 0.6 0.6 0.6 0.6 25C Typ. 3.4 4.8 3.6 6.5 4.1 5.7 Max 5.5 7.5 5.1 11.4 6.8 8.8 -40C to 85C Min Max 0.6 0.6 0.6 0.6 0.6 0.6 6.5 8.5 6.0 13.0 8.0 10.0 -40C to 125C Min Max 0.6 0.6 0.6 0.6 0.6 0.6 7.0 9.5 6.5 14.5 8.5 11.0 Unit ns ns ns ns ns ns
OE OE
Operating Characteristics
TA = 25 C
Parameter Cpd Power dissipation capacitance Test Conditions f = 1 MHz No Load VCC = 5 V Typ. 12 Unit pF
74AHC1G125
Document number: DS35176 Rev. 1 - 2
5 of 9 www.diodes.com
March 2011
(c) Diodes Incorporated
74AHC1G125
SINGLE BUFFER GATE WITH 3-STATE OUTPUT Parameter Measurement Information
RL=1 k S1
Under Test
Vcc Open GND
TEST tPLH/tPHL tPLZ/tPZL tPHZ/tPZH
S1 Open Vload GND
CL
(see Note A)
NEW PRODUCT
VCC 3.3V0.3V 5V0.5V 3.3V0.3V 5V0.5V
Inputs VI VCC VCC VCC VCC tr/tf 3ns 3ns 3ns 3ns
VM VCC/2 VCC/2 VCC/2 VCC/2
CL 15pF 15pF 50pF 50pF
V 0.3V 0.3V 0.3V 0.3V
Voltage Waveform Pulse Duration
Voltage Waveform Enable and Disable Times Low and High Level Enabling
Voltage Waveform Propagation Delay Times Inverting and Non Inverting Outputs
Figure 1. Load Circuit and Voltage Waveforms
Notes: A. Includes test lead and test apparatus capacitance. B. All pulses are supplied at pulse repetition rate 1 MHz. C. Inputs are measured separately one transition per measurement. D. tPLZ and tPHZ are the same as tdis. E. tPZL and tPZH are the same as tEN. F. tPLH and tPHL are the same as tPD.
74AHC1G125
Document number: DS35176 Rev. 1 - 2
6 of 9 www.diodes.com
March 2011
(c) Diodes Incorporated
74AHC1G125
SINGLE BUFFER GATE WITH 3-STATE OUTPUT Ordering Information
74 AHC1G 125 XX - 7
NEW PRODUCT
Logic Device 74 : Logic Prefix AHC : 2 to 5.5V Family 1G : One gate
Device 74AHC1G125W5-7 74AHC1G125SE-7
Notes:
Function
125 : 3-State Buffer OE-Low
Package
W5 : SOT25 SE : SOT353
Packing 7 : Tape & Reel
Package Code W5 SE
Packaging (Note 5) SOT25 SOT353
7" Tape and Reel Quantity Part Number Suffix 3000/Tape & Reel -7 3000/Tape & Reel -7
5. Pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Marking Information
(Top View)
5
4
7
XX Y W X 1 2 3
XX : Identification code Y : Year 0~9 W : Week : A~Z : 1~26 week; a~z : 27~52 week; z represents 52 and 53 week X : A~Z : Internal code
Part Number 74AHC1G125W5 74AHC1G125SE
Package SOT25 SOT353
Identification Code YY YY
74AHC1G125
Document number: DS35176 Rev. 1 - 2
7 of 9 www.diodes.com
March 2011
(c) Diodes Incorporated
74AHC1G125
SINGLE BUFFER GATE WITH 3-STATE OUTPUT Package Outline Dimensions (All Dimensions in mm)
(1) Package Type: SOT25
A
BC
NEW PRODUCT
H K M
N
J
D
L
SOT25 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 N 0.70 0.80 0.75 0 8 All Dimensions in mm
(2) Package Type: SOT353
A
BC
H K M
J
D
F
L
SOT353 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0 8 All Dimensions in mm
74AHC1G125
Document number: DS35176 Rev. 1 - 2
8 of 9 www.diodes.com
March 2011
(c) Diodes Incorporated
74AHC1G125
SINGLE BUFFER GATE WITH 3-STATE OUTPUT
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
NEW PRODUCT
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2011, Diodes Incorporated www.diodes.com
74AHC1G125
Document number: DS35176 Rev. 1 - 2
9 of 9 www.diodes.com
March 2011
(c) Diodes Incorporated


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